矽源特MXN6545是VDS=-30V，ID=-50A的P沟MOS.矽源特MXN6545提供DFN5*6-8L封装.

矽源特MXN6545概述：

矽源特MXN6545是VDS=-30VMXC，ID=-50A，RDS(ON)(Typ.)=4.4m?,@VGS=-10V的P-Channel MOSFET.矽源特MXN6545提供DFN5*6-8L封装.

The MXN6545 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be Used in a wide variety of applications.

矽源特MXN6545特性：

VDS =-30VMXC，ID =-50A

RDS(ON) (Typ.)= 4.4m ? @ VGS=-10V

High density cell design for ultra low Rdson

Fully characterized avalanche voltage and current

Good stability and uniformity with high EAS

Excellent package for good heat dissipation

Special process technology for high ESD capability

矽源特MXN6545应用：

Battery and loading switching

矽源特MXN6545典型应用及引脚图：