矽源特MXN2508是VDS=20V，ID=8A的Dual N-Channel MOS.MXN2508提供DFN2x5-6L

矽源特MXN2508概述：

MXN2508是VDS=20VMXC，ID=8A，@VGS=4.5V，RDS(ON)(Typ.)=14m?，@VGS=4.2V，RDS(ON)(Typ.)=14.4m?，@VGS=3.8V，RDS(ON)(Typ.)=15.6m?，@VGS=2.5V，RDS(ON)(Typ.)=19m?的Dual N-Channel MOSFET.MXN2508提供DFN2x5-6L封装.

The MXN2508 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications.it is ESD protected.

矽源特MXN2508特性：

VDS =20VMXC，ID =8A

@VGS=4.5V RDS(ON)(Typ.)=14m?

@VGS=4.2V RDS(ON)(Typ.)=14.4m?

@VGS=3.8V RDS(ON)(Typ.)=15.6m?

@VGS=2.5V RDS(ON)(Typ.)=19m?

ESD Rating: 2000V HBM

Asvanced trench MOSFET process technology

Ultra low on-resistance with low gate charge

New Thermally Enhanced DFN2X5-6L Package

矽源特MXN2508应用：

PWM applications

Load switch

Battery charge in cellular handset

矽源特MXN2508典型应用及引脚图：